? semiconductor components industries, llc, 2012 february, 2012 ? rev. 10 1 publication order number: ndf10n60z/d ndf10n60z n-channel power mosfet 600 v, 0.75 features ? low on resistance ? low gate charge ? esd diode ? protected gate ? 100% avalanche tested ? 100% r g tested ? these devices are pb ? free, halogen free/bfr free and are rohs compliant absolute maximum ratings (t c = 25 c unless otherwise noted) rating symbol ndf unit drain ? to ? source voltage v dss 600 v continuous drain current, r jc (note 1) i d 10 a continuous drain current t a = 100 c, r jc (note 1) i d 6.0 a pulsed drain current, t p = 10 s i dm 40 a power dissipation, r jc p d 39 w gate ? to ? source voltage v gs 30 v single pulse avalanche energy (l = 6.0 mh, i d = 10 a) e as 300 mj esd (hbm) (jesd22 ? a114) v esd 3900 v rms isolation voltage (t = 0.3 sec., r.h. 30%, t a = 25 c) (figure 13) v iso 4500 v peak diode recovery (note 2) dv/dt 4.5 v/ns continuous source current (body diode) i s 10 a maximum temperature for soldering leads t l 260 c operating junction and storage temperature range t j , t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. limited by maximum junction temperature. 2. i s 10 a, di/dt 200 a/ s, v dd = 80% bv dss http://onsemi.com v dss (@ t jmax )r ds(on) (max) @ 5 a 650 v 0.75 n ? channel g (1) d (2) s (3) NDF10N60ZG to ? 220fp case 221d see detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. ordering and marking information 1 2 3 ndf10n60zh to ? 220fp case 221ah 1 2 3
ndf10n60z http://onsemi.com 2 thermal resistance parameter symbol ndf10n60z unit junction ? to ? case (drain) r jc 3.2 c/w junction ? to ? ambient steady state (note 3) r ja 50 3. insertion mounted electrical characteristics (t j = 25 c unless otherwise noted) characteristic test conditions symbol min typ max unit off characteristics drain ? to ? source breakdown voltage v gs = 0 v, i d = 1 ma bv dss 600 v breakdown voltage temperature coeffi- cient reference to 25 c, i d = 1 ma bv dss / t j 0.6 v/ c drain ? to ? source leakage current v ds = 600 v, v gs = 0 v 25 c i dss 1 a 150 c 50 gate ? to ? source forward leakage v gs = 20 v i gss 10 a on characteristics (note 4) static drain ? to ? source on ? resistance v gs = 10 v, i d = 5.0 a r ds(on) 0.65 0.75 gate threshold voltage v ds = v gs , i d = 100 a v gs(th) 3.0 3.9 4.5 v forward transconductance v ds = 15 v, i d = 10 a g fs 7.9 s dynamic characteristics input capacitance (note 5) v ds = 25 v, v gs = 0 v, f = 1.0 mhz c iss 1097 1373 1645 pf output capacitance (note 5) c oss 118 150 178 reverse transfer capacitance (note 5) c rss 20 35 50 total gate charge (note 5) v dd = 300 v, i d = 10 a, v gs = 10 v q g 23 47 68 nc gate ? to ? source charge (note 5) q gs 5.0 9.0 14 gate ? to ? drain (?miller?) charge (note 5) q gd 12 26 36 plateau voltage v gp 6.4 v gate resistance r g 0.5 1.5 4.5 resistive switching characteristics turn ? on delay time v dd = 300 v, i d = 10 a, v gs = 10 v, r g = 5 t d(on) 15 ns rise time t r 31 turn ? off delay time t d(off) 40 fall time t f 23 source ? drain diode characteristics (t c = 25 c unless otherwise noted) diode forward voltage i s = 10 a, v gs = 0 v v sd 1.6 v reverse recovery time v gs = 0 v, v dd = 30 v i s = 10 a, di/dt = 100 a/ s t rr 395 ns reverse recovery charge q rr 3.0 c 4. pulse width 380 s, duty cycle 2%. 5. guaranteed by design.
ndf10n60z http://onsemi.com 3 typical characteristics 6.0 v 5.8 v 5.4 v 5.0 v 5.6 v 6.2 v 6.4 v 6.6 v figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 24 20 16 12 8 4 0 0 2 4 8 10 14 18 20 8 7 6 5 4 3 2 0 2 6 8 10 14 18 20 figure 3. on ? resistance vs. gate voltage figure 4. on ? resistance vs. drain current and gate voltage v gs , gate ? to ? source voltage (v) i d , drain current (a) 10 9 8 7 6 5 0.60 0.65 0.70 0.75 0.80 12.5 10 7.5 5.0 2.5 0.60 0.65 0.70 0.75 0.80 figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current vs. voltage t j , junction temperature ( c) v ds , drain ? to ? source voltage (v) 125 100 75 50 25 0 ? 25 ? 50 0.2 0.7 1.2 1.7 2.2 2.7 600 500 400 300 200 100 0 10 100 1000 10,000 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source res- istance (normalized) i dss , leakage (na) 6 12 16 t j = 25 c v gs = 15 v 10 v 7.0 v 4 12 16 t j = 25 c t j = ? 55 c t j = 150 c v ds = 30 v t j = 25 c i d = 5 a r ds(on) , drain ? to ? source resistance ( ) t j = 25 c v gs = 10 v 150 i d = 5 a v gs = 10 v v gs = 0 v t j = 150 c t j = 100 c
ndf10n60z http://onsemi.com 4 typical characteristics figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge v ds , drain ? to ? source voltage (v) q g , total gate charge (nc) 175 150 125 100 75 50 25 0 0 500 1000 1500 2000 2500 3000 3500 45 40 35 30 20 10 5 0 0 5 10 15 20 figure 9. resistive switching time variation vs. gate resistance figure 10. diode source current vs. forward voltage r g , gate resistance ( ) v sd , source ? to ? drain voltage (v) 100 10 1 10 100 1000 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 2 4 6 8 10 figure 11. maximum rated forward biased safe operating area for ndf10n60z v ds , drain ? to ? source voltage (v) 1000 100 10 0.1 0.01 0.1 1 10 100 c, capacitance (pf) v gs , gate ? to ? source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) 200 v gs = 0 v t j = 25 c f = 1 mhz c iss c oss c rss i d = 10 a t j = 25 c 15 25 50 55 v ds v gs qt q gs q gd 0 100 200 300 400 v ds , drain ? to ? source voltage (v) v dd = 300 v i d = 10 a v gs = 10 v t d(off) t d(on) t r t f v gs = 0 v t j = 25 c v gs 30 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 s 10 ms 1 ms dc 1
ndf10n60z http://onsemi.com 5 typical characteristics 10% figure 12. thermal impedance for ndf10n60z pulse time (sec) 100 10 1 0.01 0.001 0.00001 0.000001 0.001 0.01 0.1 10 r(t) ( c/w) duty cycle = 50% 20% 5% 2% 1% single pulse leads heatsink 0.110 min figure 13. mounting position for isolation test measurement made between leads and heatsink with all leads shorted together. 1 0.0001 0.1 1000 r jc = 3.2 c/w steady state *for additional mounting information, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ndf10n60z http://onsemi.com 6 ordering information order number package shipping ? NDF10N60ZG to ? 220fp (pb ? free, halogen ? free) 50 units / rail ndf10n60zh to ? 220fp (pb ? free, halogen ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. marking diagrams NDF10N60ZG or ndf10n60zh ayww gate source drain to ? 220fp a = location code y = year ww = work week g, h = pb ? free, halogen ? free package
ndf10n60z http://onsemi.com 7 package dimensions to ? 220 fullpak case 221d ? 03 issue k style 1: pin 1. gate 2. drain 3. source dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y
ndf10n60z http://onsemi.com 8 package dimensions to ? 220 fullpack, 3 ? lead case 221ah issue b dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 6.70 7.10 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ndf10n60z/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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